Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

Results of experimental investigation detection (rectification) high power X-band microwave signal in diodes various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum the detected direct voltage V vs. P and subsequent polarity reversal, previously found MIM optical bands, have to be characteristic all investigated as well. After reversal polarity, this dependence comes linear, sign corresponds thermoEMF. In some diodes, hysteresis on V(P) was observed. All 5 types (have made from different pairs metals), reported earlier, were reproduced same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced suggest that there is an unknown mechanism for flow charge carriers (and generate current) high-frequency electrical field, which differs conventional rectification.